Michael Krames Fellow IEEE Volunteer

Palo Alto, California , USA  •  IEEE Santa Clara Valley Section
Tagline
Wide Bandgap Semiconductor Consulting & Technology Development
Contact
  • Phone
    +16508234007 (Cell)
Biography
Mike Krames received his Ph.D. in electrical engineering from the University of Illinois at Urbana-Champaign. After graduation, Dr. Krames joined Hewlett-Packard as a research engineer developing high-power visible-spectrum LEDs. He subsequently formed the Advanced Laboratories for Lumileds Lighting Co., a joint venture between Hewlett-Packard and Philips. There his research focused on III-nitride epitaxy, LED devices, luminescent materials for down-conversion, and applications of LEDs to lighting and displays. Dr. Krames has spearheaded several advancements, including flip-chip technology (the basis for Luxeon™), thin-film technology, photonic crystal LEDs, nitride- and ceramic-based phosphors, LEDs for high colour gamut displays, and advancing understanding behind “droop” in InGaN-GaN LEDs. In 2009, he joined the management team of Soraa. Dr. Krames has published more than 80 papers and been granted more than 100 patents worldwide.
Technical Expertise
Consumer Electronics
Expert Witness
Illumination/Lighting
Semiconductor Fab
Optics
Business Planning
Lasers
Management
Special Skills
Technical Specialties
Consulting and technology development for entities involved in or impacted by wide bandgap semiconductor materials, devices, and/or applications, including product strategy & roadmapping, fundraising, team building, business development, and intellectual property including expert witness in patent litigation. Keywords for specific areas of expertise: gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), laser diodes, light-emitting diodes, LED, LED displays, LED lighting, phosphor materials, photonics, solar, solid-state...
Interests
Epitaxial layers
Light emitting diodes
Semiconductor device manufacture
Semiconductor devices
Semiconductor devices
Epitaxial growth
Semiconductor device manufacture
Semiconductor device packaging
Semiconductor lasers
Experience
V.P. Engineering/Director Engineering
Philips Lumileds Lighting Co, LLC
Design Engineer
Hewlett-Packard Co
Not Supplied
Soraa, Inc.
Scientific Manager
Arkesso, LLC
Member Recognitions
for leadership in GaN-based light-emitting device physics and its commercialization
Publications
Krames, M.R., Minervini, A.D.Chen, E.I.Holonyak Jr., N., and Baker, J.E., "Improved thermal stability of AlGaAs-GaAs quantum well heterostructures using a {'}blocking{'} Zn diffusion to reduce column-III vacancies," Applied Physics Letters, vol. 67, 1995.
Krames, M.R., Minervini, A.D.Chen, E.I.Holonyak Jr., N., and Baker, J.E., "Improved thermal stability of AlGaAs-GaAs quantum well heterostructures using a {'}blocking{'} Zn diffusion to reduce column-III vacancies," Applied Physics Letters, vol. 67, 1995.
Education
University of Illinois-Urbana
Doctor of Philosophy
Other , 1995
University of Illinois-Urbana
Master of Science
Other , 1992
University of Texas-Austin
Bachelor of Science
Other , 1989